@Article{UedaTanDallRoss:2007:SeElSu,
author = "Ueda, M{\'a}rio and Tan, Ing Hwie and Dallaqua, Renato
S{\'e}rgio and Rossi, Jos{\'e} Oswaldo",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas
Espaciais (INPE)}",
title = "Secondary electron suppression in nitrogen plasma ion implantation
using a low DC magnetic field",
journal = "Surface and Coatings Technology",
year = "2007",
volume = "201",
number = "15",
pages = "6597--6600",
month = "Apr",
keywords = "Plasma immersion ion implantation, Secondary electrons, Magnetic
suppression.",
abstract = "Experiments aiming at the reduction or even total suppression of
secondary electrons during the plasma immersion ion implantation
were carried out using a plasma device with low DC magnetic field.
Comparison of ion implantations in B = 0 and another case with B =
43 G, indicated that the magnetic field was effective to suppress
SE flow in the direction transversal to B but only partial
suppression was attained in the longitudinal direction. However,
these results are already significant since the efficiency of
implantation was increased and the flow of SE to the walls became
localized to the regions with B crossing the walls.",
copyholder = "SID/SCD",
issn = "0257-8972",
language = "en",
targetfile = "secondary electron.pdf",
urlaccessdate = "18 maio 2024"
}